A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena

This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.